Analytical studies of nickel silicide formation through a thin Ti layer

被引：0
|
作者：
Fenske, F. [1 ]
Schopke, A. [1 ]
Schulze, S. [1 ]
Selle, B. [1 ]
机构：
[1] Hahn-Meitner-Inst Berlin, Berlin, Germany
来源：
Applied Surface Science | 1996年 / 104-105卷
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
26
引用
收藏
页码：218 / 222
相关论文
共 50 条
  • [41] XTEM studies of nickel silicide growth on Si(100) using a Ni/Ti bilayer system
    Falke, U
    Fenske, F
    Schulze, S
    Hietschold, M
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1997, 162 (02): : 615 - 621
  • [42] LASER-INDUCED NICKEL SILICIDE FORMATION
    TAMIR, S
    ALTSHULIN, S
    ZAHAVI, J
    THIN SOLID FILMS, 1991, 202 (02) : 257 - 266
  • [43] MODIFICATION OF NICKEL SILICIDE FORMATION BY OXYGEN IMPLANTATION
    SCOTT, DM
    NICOLET, MA
    NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR): : 655 - 660
  • [44] Laser Spike Annealing for Nickel Silicide Formation
    Hebb, Jeffrey
    Wang, Yun
    Shetty, Shrinivas
    McWhirter, Jim
    Owen, David
    Shen, Michael
    Le, Van
    Mileham, Jeffrey
    Gaines, David
    Anikitchev, Serguei
    Chen, Shaoyin
    Lee, Joe
    2011 22ND ANNUAL IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2011,
  • [45] Formation and Evolution of Nickel Silicide in Silicon Nanowires
    Katsman, Alex
    Beregovsky, Michael
    Yaish, Yuval Eliyahu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (10) : 3363 - 3371
  • [46] Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer
    Chen, Wei-Ren
    Chang, Ting-Chang
    Yeh, Jui-Lung
    Sze, S. M.
    Chang, Chun-Yen
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (09)
  • [47] Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer
    Chen, Wei-Ren
    Chang, Ting-Chang
    Yeh, Jui-Lung
    Sze, S.M.
    Chang, Chun-Yen
    Journal of Applied Physics, 2008, 104 (09):
  • [48] Influence of atomic hydrogen on nickel silicide formation
    Vengurlekar, A
    Balasubramanian, S
    Ashok, S
    Theodore, ND
    Chi, DZ
    SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY, 2004, 810 : 159 - 164
  • [49] SILICIDE FORMATION AT THE TI/SI(111) INTERFACE
    CHAMBERS, SA
    DELGIUDICE, M
    HILL, DM
    XU, F
    JOYCE, JJ
    RUCKMAN, MW
    WEAVER, JH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1508 - 1509
  • [50] Formation of Palladium Silicide on Heavily Doped Si(001) Substrates Using Ti Intermediate Layer
    Suryana, Risa
    Nakatsuka, Osamu
    Zaima, Shigeaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (05) : 05FA091 - 05FA095
12345