Photoluminescence of Epitaxial Layer GaAs Obtained by Hydride Method VPE.

被引：0
|
作者：
Bugajski, Maciej [1 ]
Lewandowski, Wojciech [1 ]
Panek, Marek [1 ]
Ratuszek, Marek [1 ]
Tlaczala, Marek [1 ]
机构：
[1] Inst Technologii Elektronowej, Warsaw, Pol, Inst Technologii Elektronowej, Warsaw, Pol
来源：
Elektronika Warszawa | 1987年 / 28卷 / 09期
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学科分类号：
摘要：
PHOTOLUMINESCENCE
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页码：13 / 15
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