Interaction between basal stacking faults and prismatic inversion domain boundaries in GaN

被引：0
|
作者：
Komninou, Philomela [1 ]
Kioseoglou, Joseph [1 ]
Sarigiannidou, Eirini [1 ]
Dimitrakopulos, George P. [1 ]
Kehagias, Thomas [1 ]
Georgakilas, Alexandros [1 ]
Nouet, Gerard [1 ]
Ruterana, Pierre [1 ]
Karakostas, Theodoros [1 ]
机构：
[1] IESL/FORTH, Physics Department, University of Crete, P.O. Box 1527, Heraklion-Crete 71110, Greece
来源：
Materials Research Society Symposium - Proceedings | 2001年 / 639卷
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Crystal structure - Crystallization - Epitaxial growth - Film growth - Grain boundaries - High resolution electron microscopy - Stacking faults
引用
收藏
相关论文
共 50 条
  • [21] DIFFRACTION CONTRAST BETWEEN INVERSION DOMAINS AND AT INVERSION DOMAIN BOUNDARIES
    SNYKERS, M
    SERNEELS, R
    DELAVIGNETTE, P
    GEVERS, R
    VANLANDUYT, J
    AMELINCKX, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 51 - 63
  • [22] Inversion Domain Boundaries in GaN Wires Revealed by Coherent Bragg Imaging
    Labat, Stephane
    Richard, Marie-Ingrid
    Dupraz, Maxime
    Gailhanou, Marc
    Beutier, Guillaume
    Verdier, Marc
    Mastropietro, Francesca
    Cornelius, Thomas W.
    Schuelli, Tobias U.
    Eymery, Joel
    Thomas, Olivier
    ACS NANO, 2015, 9 (09) : 9210 - 9216
  • [23] Inversion domain boundaries in GaN studied by X-ray microprobe
    Martinez-Criado, Gema
    Somogyi, Andrea
    Alen, Benito
    Miskys, Claudio
    Tucoulou, Remi
    Cloetens, Peter
    Sans, Juan Angel
    Susini, Jean
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (1-2): : 31 - 33
  • [24] Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries
    Auzelle, Thomas
    Haas, Benedikt
    Den Hertog, Martien
    Rouviere, Jean-Luc
    Daudin, Bruno
    Gayral, Bruno
    APPLIED PHYSICS LETTERS, 2015, 107 (05)
  • [25] Origin of the efficient light emission from inversion domain boundaries in GaN
    Fiorentini, V
    APPLIED PHYSICS LETTERS, 2003, 82 (08) : 1182 - 1184
  • [26] Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC
    Zimbone, Massimo
    Barbagiovanni, Eric Gasparo
    Bongiorno, Corrado
    Calabretta, Cristiano
    Calcagno, Lucia
    Fisicaro, Giuseppe
    La Magna, Antonino
    La Via, Francesco
    CRYSTAL GROWTH & DESIGN, 2020, 20 (05) : 3104 - 3111
  • [27] An X-ray diffraction technique for analyzing basal-plane stacking faults in GaN
    Paduano, Qing S.
    Weyburne, David W.
    Drehman, Alvin J.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2010, 207 (11): : 2446 - 2455
  • [28] Interaction between a screw dislocation and stacking faults in FCC metals
    Wei, Haojie
    Wei, Yueguang
    MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2012, 541 : 38 - 44
  • [29] Multiple atomic configurations of inversion domain boundaries in GaN grown on (111)Si
    Sánchez, AM
    Pacheco, FJ
    Molina, SI
    García, R
    Ruterana, P
    Nouet, G
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2001, 2001, (169): : 333 - 336
  • [30] Determination of the atomic structure of inversion domain boundaries in α-GaN by transmission electron microscopy
    Cherns, D
    Young, WT
    Saunders, M
    Steeds, JW
    Ponce, FA
    Nakamura, S
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1998, 77 (01): : 273 - 286
12345