Interaction between basal stacking faults and prismatic inversion domain boundaries in GaN

被引：0

作者：

Komninou, Philomela ^{[1
]}

Kioseoglou, Joseph ^{[1
]}

Sarigiannidou, Eirini ^{[1
]}

Dimitrakopulos, George P. ^{[1
]}

Kehagias, Thomas ^{[1
]}

Georgakilas, Alexandros ^{[1
]}

Nouet, Gerard ^{[1
]}

Ruterana, Pierre ^{[1
]}

Karakostas, Theodoros ^{[1
]}

机构：

[1] IESL/FORTH, Physics Department, University of Crete, P.O. Box 1527, Heraklion-Crete 71110, Greece

来源：

Materials Research Society Symposium - Proceedings | 2001年 / 639卷

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Crystal structure - Crystallization - Epitaxial growth - Film growth - Grain boundaries - High resolution electron microscopy - Stacking faults

引用

共 50 条

[1] Atomic-scale models of interactions between inversion domain boundaries and intrinsic basal stacking faults in GaN
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