LOW DARK CURRENT InGaAs PIN PHOTODIODES GROWN BY MOLECULAR BEAM EPITAXY.

被引：0

作者：

Cinguino, P. ^{[1
]}

Genova, F. ^{[1
]}

Rigo, C. ^{[1
]}

Stano, A. ^{[1
]}

机构：

[1] Centro Studi e Lab Telecomunicazioni, SpA, Turin, Italy, Centro Studi e Lab Telecomunicazioni SpA, Turin, Italy

来源：

CSELT Technical Reports | 1985年 / 13卷 / 02期

关键词：

OPTICAL FIBERS - POLYIMIDES - Applications - SEMICONDUCTING GALLIUM ARSENIDE - SEMICONDUCTING GALLIUM COMPOUNDS - SEMICONDUCTING INDIUM COMPOUNDS;

D O I：

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中图分类号：

学科分类号：

摘要：

High quality InGaAs PIN photodiodes have been made from high-purity layers grown on InP substrate by molecular beam epitaxy. The diodes are top-illuminated mesa-type passivated and planarized by polyimide. The devices exhibit dark current densities as low as 2. 3 10** minus **5 A/cm**2 at minus 10 v with a breakdown voltage of minus 80 v, an external quantum efficiency greater than 40% in the 1. 3-1. 6 mu m range and response time of 210 ps (FWHM). These values are comparable with those obtained by other more conventional growth techniques and the best so far reported by MBE.

引用

页码：113 / 115

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