New Si doping source for GaAs growth by molecular beam epitaxy

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作者：
Horikoshi, Yoshiji [1 ]
Fahy, Mike R. [1 ]
Kawashima, Minoru [1 ]
Furukawa, Kazuaki [1 ]
Fujino, Masaie [1 ]
Matsumoto, Nobuo [1 ]
机构：
[1] NTT Basic Research Lab, Kanagawa, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1994年 / 33卷 / 3 B期
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