共 36 条
- [31] MOLECULAR-BEAM EPITAXY OF GAN(0001) UTILIZING NH3 AND/OR NHX+ IONS - GROWTH-KINETICS AND DEFECT STRUCTURE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (05): : 2293 - 2302
- [34] Influence of inert nitrogen molecules, nitrogen radical atoms and nitrogen molecular ions on growth process and crystal structure of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 351 - 354
- [36] Mutual influence among inert nitrogen molecules, nitrogen radical atoms, nitrogen radical molecules and nitrogen molecular ions on growth process and crystal structure of GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by molecular-beam epitaxy assisted by electron cyclotron resonance JOURNAL OF CRYSTAL GROWTH, 2001, 233 (1-2) : 22 - 33