Mechanism on energy transfer of photoluminescence exciton in erbium doped silicon

被引：0
|
作者：
Lei, Hongbing [1 ]
Yang, Qinqing [1 ]
Ou, Haiyan [1 ]
Yu, Jinzhong [1 ]
Wang, Qiming [1 ]
机构：
[1] Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 03期
关键词：
Erbium doped silicon - Lamp heating rapid thermal annealing;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
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页码：232 / 238
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