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- [3] A PHOTOLUMINESCENCE AND PHOTOCAPACITANCE STUDY OF GAAS-IN AND GAAS-SB LAYERS GROWN BY LIQUID-PHASE EPITAXYSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) : 1649 - 1653MALLIK, KDHAR, SSINHA, S
- [4] DETECTION OF TRAPS IN ZNSE GROWN BY LIQUID-PHASE EPITAXYJOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) : 170 - 173IDO, TOKADA, M
- [5] EFFICIENT PHOTOEMISSION FROM GAAS GROWN BY LIQUID PHASE EPITAXYBULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (11): : 1337 - &SCHADE, HNELSON, HKRESSEL, H
- [6] THIN GaAs LAYERS GROWN BY LIQUID PHASE EPITAXY.Electron Technology (Warsaw), 1973, 6 (1-2): : 115 - 124Piskorski, M.
- [7] BISTABLE DEFECTS IN GAAS GROWN BY LIQUID-PHASE EPITAXYSOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (09): : 1044 - 1045BRUNKOV, PNKONNIKOV, SGPAPENTSEV, MISOBOLEV, MMSTEPANOVA, MN
- [8] STRUCTURE OF GAAS LAYERS GROWN BY LIQUID-PHASE EPITAXYZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1972, 32 (5-6): : 381 - &GROBE, ESALOW, H
- [9] GROWTH SPIRALS IN GAAS GROWN BY LIQUID-PHASE EPITAXYJOURNAL OF CRYSTAL GROWTH, 1977, 38 (02) : 233 - 238KIMURA, CYANAKI, THOSHINO, H
- [10] HIGH PURITY GAAS CRYSTALS GROWN BY LIQUID PHASE EPITAXYJAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) : 509 - &MIKI, HOTSUBO, M
