Development of broadband 3-5μm quantum well infrared photodetectors

被引：0
|
作者：
Li, H.W. [1 ]
Li, W. [1 ]
Huang, Q. [1 ]
Zhou, J.M. [1 ]
机构：
[1] Inst. of Phys., Chinese Acad. of Sci., Beijing 100080, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2000年 / 21卷 / 12期
关键词：
Detectivity - Infrared photodetector;
D O I：
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学科分类号：
摘要：
Broadband 3-5μm quantum well infrared photodetectors have been successfully grown by molecular beam epitaxy. High-quality strained InGaAs/AlGaAs multi-quantum well with Si doping were acquired on GaAs substrate. The peak response λp is of 4.2μm and the response bandwidth Δλ/λ to be 50%. The 500 K blackbody detectivity DBB* (500, 1000, 1) of the detector can reach 1.7× 1010 cm&middotHz1/2/W.
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页码：1220 / 1223
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