X-ray reflectometry of fullerene-containing carbon films

被引：0
|
作者：
Petrakov, A.P. [1 ]
Golubev, E.A. [1 ]
机构：
[1] Syktyvkar State University, Syktyvkar, Russia
来源：
Surface Investigation X-Ray, Synchrotron and Neutron Techniques | 2001年 / 16卷 / 09期
关键词：
Fullerenes - Laser beam effects - Problem solving - Semiconducting silicon - X ray analysis;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
X ray reflectometry was used for the analysis of fullerene containing carbon films. The relief of a film containing fullerenes was determined by numerical methods by varying the parameters of the problem. It was found that the use of repeated laser pulses allows one to deposit the films with high thickness stability on the substrate.
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页码：1377 / 1380
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