Possible relationship between Schottky barrier heights and adhesion energies of metal/semiconductor or insulator interfaces

被引：0
|
作者：
Li, Jianguo [1 ]
机构：
[1] Technical Univ Berlin, Berlin, Germany
来源：
Rare Metals | 1994年 / 13卷 / 01期
关键词：
Crystals - Interfacial energy - Semiconductor materials - Surface phenomena;
D O I：
暂无
中图分类号：
O48 [固体物理学];
学科分类号：
070205 ; 0805 ; 080502 ; 0809 ;
摘要：
A possible relationship between Schottky barrier heights and adhesion energies of different nonreactive metal/semiconductor or insulator interfaces was presented. Various experimental evidences further supporting such a relationship were briefly exploited. The consequence indicated by such a relationship on the understanding of metal/ceramic interfaces was stressed.
引用
收藏
页码：7 / 12
相关论文
共 50 条
  • [31] PHOTOCHARGING TECHNIQUE FOR BARRIER DETERMINATION ON SEMICONDUCTOR INSULATOR INTERFACES
    ADAMCHUK, VK
    AFANAS'EV, VV
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1992, 132 (02): : 371 - 379
  • [32] METAL-INSULATOR SEMICONDUCTOR SCHOTTKY-BARRIER SOLAR-CELLS FABRICATED ON INP
    KAMIMURA, K
    SUZUKI, T
    KUNIOKA, A
    APPLIED PHYSICS LETTERS, 1981, 38 (04) : 259 - 261
  • [33] CALCULATION OF SCHOTTKY-BARRIER HEIGHTS FROM SEMICONDUCTOR BAND STRUCTURES
    TERSOFF, J
    SURFACE SCIENCE, 1986, 168 (1-3) : 275 - 284
  • [34] FORMATION OF METAL-SEMICONDUCTOR INTERFACES - FROM THE SUBMONOLAYER REGIME TO THE REAL SCHOTTKY-BARRIER
    SCHAFFLER, F
    ABSTREITER, G
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1184 - 1189
  • [35] Schottky barrier heights and band alignments in transition metal dichalcogenides
    Guo, Yuzheng
    Robertson, John
    MICROELECTRONIC ENGINEERING, 2015, 147 : 184 - 187
  • [36] Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers
    Schmitsdorf, RF
    Kampen, TU
    Monch, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1221 - 1226
  • [37] First-Principles Study of Schottky Barrier Heights on Metal/4H-SiC Polar Interfaces
    Ji, Wen
    Tang, Xi
    Cao, Ruyue
    Jiang, Ming
    Guo, Yuzheng
    Zhou, Shuxing
    Hu, Cungang
    Zhang, Zhaofu
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2024, 261 (05):
  • [38] METAL-N-GAP SCHOTTKY-BARRIER HEIGHTS
    LEI, TF
    LEE, CL
    CHANG, CY
    SOLID-STATE ELECTRONICS, 1979, 22 (12) : 1035 - 1037
  • [39] AN XPS STUDY OF SILICON NOBLE-METAL INTERFACES - BONDING TRENDS AND CORRELATIONS WITH THE SCHOTTKY-BARRIER HEIGHTS
    GRUNTHANER, PJ
    GRUNTHANER, FJ
    MADHUKAR, A
    PHYSICA B & C, 1983, 117 (MAR): : 831 - 833
  • [40] Schottky-barrier heights of metal/alpha-SiC{0001} interfaces by first-principles calculations
    Tanaka, Shingo
    Tamura, Tomoyuki
    Okazaki, Kazuyuki
    Ishibashi, Shoji
    Kohyama, Masanori
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8, 2007, 4 (08): : 2972 - +
12345