Enhancement of phosphorus incorporation and growth rate of epitaxial diamond films by the addition of nitrogen

被引:0
|
作者
机构
来源
Appl Phys Lett | / 6卷 / 688期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] Effect of Growth Temperature on the Indium Incorporation in InGaN Epitaxial Films
    Chang, P. C.
    Yu, C. L.
    Jahn, Y. W.
    Chang, S. J.
    Lee, K. H.
    APPLICATIONS OF ENGINEERING MATERIALS, PTS 1-4, 2011, 287-290 : 1456 - +
  • [32] The effect of the C incorporation pathway on the growth rate of epitaxial SiGeC
    Kim, H. -W.
    Choi, S.
    Hong, S.
    Jung, H. K.
    Lee, G. D.
    Yoon, E.
    Kim, C. S.
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (03) : 685 - 689
  • [33] GROWTH AND CHARACTERIZATION OF PHOSPHORUS-DOPED DIAMOND FILMS
    FLEMISH, JR
    SCHAUER, SN
    WITTSTRUCK, R
    LANDSTRASS, MI
    PLANO, MA
    DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 672 - 676
  • [34] Phosphorus donor incorporation in (100) homoepitaxial diamond: Role of the lateral growth
    Pinault-Thaury, M-A
    Tillocher, T.
    Kobor, D.
    Habka, N.
    Jomard, F.
    Chevallier, J.
    Barjon, J.
    JOURNAL OF CRYSTAL GROWTH, 2011, 335 (01) : 31 - 36
  • [35] Nitrogen incorporation in diamond films homoepitaxially grown by chemical vapour deposition
    Iakoubovskii, K
    Adriaenssens, GJ
    Vohra, YK
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2000, 12 (30) : L519 - L524
  • [36] Study of the growth of thin epitaxial CVD diamond films on silicon
    Geier, S
    Hessmer, R
    Schreck, M
    Stritzker, B
    Rauschenbach, B
    Helming, K
    Kunze, K
    Erfurth, W
    EUROPEAN POWDER DIFFRACTION: EPDIC IV, PTS 1 AND 2, 1996, 228 : 445 - 450
  • [37] ON EPITAXIAL-GROWTH OF DIAMOND FILMS ON (100) SILICON SUBSTRATES
    NARAYAN, J
    SRIVATSA, AR
    PETERS, M
    YOKOTA, S
    RAVI, KV
    APPLIED PHYSICS LETTERS, 1988, 53 (19) : 1823 - 1825
  • [38] Behavior of electron emission from phosphorus-doped epitaxial diamond films
    Kimura, C
    Koizumi, S
    Kamo, M
    Sugino, T
    DIAMOND AND RELATED MATERIALS, 1999, 8 (2-5) : 759 - 762
  • [39] A nucleation site and mechanism leading to epitaxial growth of diamond films
    Lee, ST
    Peng, HY
    Zhou, XT
    Wang, N
    Lee, CS
    Bello, I
    Lifshitz, Y
    SCIENCE, 2000, 287 (5450) : 104 - 106
  • [40] Growth rate dependence of nitrogen incorporation in reactively sputtered FeXN films for recording head poles
    Bain, JA
    Pellerin, K
    Chow, JT
    Zou, P
    IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) : 3473 - 3475