共 50 条
- [22] NEW FRONTIERS OF MOLECULAR-BEAM EPITAXY WITH IN-SITU PROCESSINGJOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 277 - 284HONG, M
- [23] Epitaxial growth of aluminum on silicon substrates by metallorganic molecular beam epitaxy using dimethyl-ethylamine alaneJpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 5 A (2602-2605):Tohoku Univ, Sendai, Japan
- [24] In situ control of gan growth by molecular beam epitaxyJournal of Electronic Materials, 1997, 26 : 272 - 280R. HeldD. E. CrawfordA. M. JohnstonA. M. DabiranP. I. Cohen
- [25] In situ control of GaN growth by molecular beam epitaxyJOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 272 - 280Held, RCrawford, DEJohnston, AMDabiran, AMCohen, PI
- [26] IN-SITU MASKLESS SELECTIVE-AREA EPITAXY OF GAAS USING A LOW-ENERGY GA FOCUSED ION-BEAMJOURNAL OF CRYSTAL GROWTH, 1994, 140 (1-2) : 244 - 247PAK, KSAITOH, IOHSHIMA, NYONEZU, H
- [27] Selective area epitaxy of GaSb by metal-organic molecular beam epitaxy Liu, Xuefeng, 1600, (32):
- [28] Selective area growth of GaN on Si substrate using SiO2 mask by metallorganic vapor phase epitaxy1998, JJAP, Tokyo, Japan (37):Kawaguchi, YasutoshiHonda, YoshioMatsushima, HidetadaYamaguchi, MasahitoHiramatsu, KazumasaSawaki, Nobuhiko
- [29] PERIODIC SUPPLY EPITAXY - A NEW APPROACH FOR THE SELECTIVE-AREA GROWTH OF GAAS BY MOLECULAR-BEAM EPITAXYJOURNAL OF CRYSTAL GROWTH, 1995, 156 (1-2) : 1 - 10ALLEGRETTI, FENISHINAGA, T
- [30] In-situ control during molecular beam epitaxy:: impurity incorporation and dissimilar materials epitaxial growthMATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 75 (2-3): : 157 - 165Däweritz, LWang, ZMSchippan, FTrampert, APloog, KH