user

STUDY OF CONTACT AND SHALLOW JUNCTION CHARACTERISTICS IN SUBMICRON CMOS WITH SELF-ALIGNED TITANIUM SILICIDE.

被引：0
|
作者：
Taur, Y.
Davari, B.
Moy, D.
Sun, J.Y.-C.
Ting, C.Y.
机构：
来源：
IBM Journal of Research and Development | 1987年 / 31卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：627 / 633
相关论文
共 50 条
  • [21] THERMALLY STABLE, LOW-LEAKAGE SELF-ALIGNED TITANIUM SILICIDE JUNCTIONS
    YOSHIDA, T
    OGAWA, S
    OKUDA, S
    KOUZAKI, T
    TSUKAMOTO, K
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (06) : 1914 - 1917
  • [22] Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (NS) implantation process
    Jia, YM
    Lim, CW
    Bourdillon, AJ
    Boothroyd, C
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1999, 18 (05) : 385 - 388
  • [23] Exposed area ratio dependent etching in a submicron self-aligned contact etching
    Kim, J
    Chu, CW
    Kang, CJ
    Han, WS
    Moon, JT
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 2065 - 2070
  • [24] The reliability improvement on self-aligned contact CMOS by optimizing poly etching
    Chang, CD
    Chu, CY
    Lin, DE
    TWENTY THIRD IEEE/CPMT INTERNATIONAL ELECTRONICS MANUFACTURING TECHNOLOGY SYMPOSIUM, 1998, : 136 - 138
  • [25] Transmission electron microscopy observation of CMOS devices of titanium self-aligned silicide technology with nitrogen (N+) implantation process
    Department of Materials Science, National University of Singapore, Kent Ridge Crescent, Singapore 119260, Singapore
    不详
    J Mater Sci Lett, 5 (385-388):
  • [26] 0.1 mu m MOSFET with super self-aligned shallow junction electrodes
    Ishii, M
    Goto, K
    Sakuraba, M
    Matsuura, T
    Murota, J
    Kudoh, Y
    Koyanagi, M
    ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 441 - 449
  • [27] A STUDY OF SELF-ALIGNED CONTACT ETCH OF NOR FLASH
    Zheng, Erhu
    Zhang, Yiying
    Zhang, Haiyang
    2015 China Semiconductor Technology International Conference, 2015,
  • [28] SOURCE DRAIN CONTACT RESISTANCE IN CMOS WITH SELF-ALIGNED TISI2
    TAUR, Y
    SUN, JYC
    MOY, D
    WANG, LK
    DAVARI, B
    KLEPNER, SP
    TING, CY
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 575 - 580
  • [29] SELF-ALIGNED SHALLOW JUNCTION MJFET (METAL JUNCTION FET) FOR HIGHER TURN-ON AND BREAKDOWN VOLTAGES
    JEON, BT
    HAN, JH
    LEE, K
    KWON, YS
    IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) : 630 - 632
  • [30] A self-aligned silicide process for thin silicon-on-insulator MOSFETs and bulk MOSFETs with shallow junctions
    Cohen, GM
    Cabral, C
    Lavoie, C
    Solomon, PM
    Guarini, KW
    Chan, KK
    Roy, RA
    MATERIALS ISSUES IN NOVEL SI-BASED TECHNOLOGY, 2002, 686 : 89 - 93
12345