Alternative method for measuring flatband voltage in MOS devices

被引:0
|
作者
Microlectron. Semiconduct. Device P., Electronics Inst., Univ. M. M., Tizi-Ouzou, Algeria [1 ]
不详 [2 ]
机构
来源
Microelectron Eng | / 3-4卷 / 205-209期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] Measuring of slip resistance - An alternative method
    Kleicke, Roland
    Klug, Peter
    Köckritz, Uwe
    Lotzmann, Hagen
    Raschdorf, Monika
    Cherif, Chokri
    Unitex, 2010, (03): : 21 - 22
  • [42] An Alternative Method for Measuring Financial Frictions
    Aysun, Uluc
    B E JOURNAL OF MACROECONOMICS, 2011, 11 (01):
  • [43] An alternative method of measuring the QT interval
    Gibb, W
    Westphal, N
    Jalali, L
    Bornzin, G
    Florio, J
    Park, E
    EUROPACE '97 - THE OFFICIAL MEETING OF THE WORKING GROUPS ON CARDIAC PACING AND ARRHYTHMIAS OF THE EUROPEAN SOCIETY OF CARDIOLOGY, 1997, : 641 - 645
  • [44] An alternative method for measuring scoliosis curvature
    Chen, Yi-Lang
    Chen, Wen-Jer
    Chiou, Wen-Ko
    ORTHOPEDICS, 2007, 30 (10) : 828 - 831
  • [45] A TLP-Based Characterization Method for Transient Gate Biasing of MOS Devices in High-Voltage Technologies
    Willemen, Joost
    Johnsson, David
    Cao, Yiqun
    Stecher, Matthias
    ELECTRICAL OVERSTRESS/ELECTROSTATIC DISCHARGE SYMPOSIUM PROCEEDINGS 2010, 2010,
  • [46] METHOD FOR NORMALIZING PRECISION OF MEASURING DEVICES
    NOVITSKI.PV
    MEASUREMENT TECHNIQUES-USSR, 1966, (10): : 1241 - &
  • [47] A CALIBRATION METHOD FOR THORON MEASURING DEVICES
    HOHLE, R
    WETZSTEIN, E
    ATOMKERNENERGIE, 1968, 13 (04): : 285 - +
  • [48] Monolithic integration of low voltage devices in 3 kV planar MOS controlled power devices
    Ngw, CK
    Sweet, M
    Bose, JVSC
    Spulber, O
    King, NL
    Vershinin, K
    De Souza, MM
    Narayanan, EMS
    SOLID-STATE ELECTRONICS, 2001, 45 (01) : 127 - 132
  • [49] AVALANCHE BREAKDOWN IN HIGH-VOLTAGE D-MOS DEVICES
    DECLERCQ, MJ
    PLUMMER, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (01) : 1 - 4
  • [50] INFLUENCE OF TRICHLOROETHYLENE ON ROOM-TEMPERATURE FLATBAND VOLTAGES OF MOS CAPACITORS
    HEALD, DL
    DAS, RM
    KHOSLA, RP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (02) : 302 - 303