Time-resolved photoluminescence study of Si/β-FeSi2/Si structures grown by molecular beam epitaxy

被引：0
|
作者：
Suemasu, Takashi [1 ,2 ]
Takauji, Motoki [1 ]
Li, Cheng [2 ]
Ozawa, Yoshinori [1 ]
Ichida, Masao [3 ]
Hasegawa, Fumio [1 ,2 ]
机构：
[1] Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
[2] Ctr. for Tsukuba Adv. Res. Alliance, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
[3] Department of Physics, Konan University, Kobe, Hyogo 658-8501, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 2004年 / 43卷 / 7 A期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Time-resolved and excitation-dependent photoluminescence study of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy
    Zhao, Xin-Hao
    DiNezza, Michael J.
    Liu, Shi
    Lin, Su
    Zhao, Yuan
    Zhang, Yong-Hang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2014, 32 (04):
  • [32] ELECTRON-ENERGY-LOSS SPECTROSCOPY ON FESI2/SI(111) HETEROSTRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY
    ROSEN, B
    SCHAFER, HC
    DIEKER, C
    LUTH, H
    RIZZI, A
    GERTHSEN, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (04): : 1407 - 1412
  • [33] Nondestructive investigation of β-FeSi2/Si interface by photoluminescence measurements
    Terai, Yoshikazu
    Maeda, Yoshihito
    Fujiwara, Yasufumi
    THIN SOLID FILMS, 2007, 515 (22) : 8129 - 8132
  • [34] PROPERTIES OF DEEP PHOTOLUMINESCENCE BANDS IN SIGE/SI QUANTUM STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    BUYANOVA, IA
    CHEN, WM
    HENRY, A
    NI, WX
    HANSSON, GV
    MONEMAR, B
    APPLIED PHYSICS LETTERS, 1995, 67 (12) : 1642 - 1644
  • [35] Comparison of cathodoluminescence and photoluminescence of CdSeTe films grown on Si by molecular beam epitaxy
    Campo, EM
    Hierl, T
    Hwang, JCM
    Chen, YP
    Brill, G
    Dhar, NK
    INFRARED DETECTOR MATERIALS AND DEVICES, 2004, 5564 : 86 - 91
  • [36] PHOTOLUMINESCENCE OF SI-DOPED ALAS GROWN BY MOLECULAR-BEAM EPITAXY
    KUDO, K
    MAKITA, Y
    NOMURA, T
    TANAKA, H
    MASUDA, M
    MITSUHASHI, Y
    MATSUMORI, T
    IZUMI, T
    KOBAYASHI, T
    JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) : 3371 - 3373
  • [37] Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2 film/Si double heterostructures on Si(001) substrates by molecular beam epitaxy
    Sunohara, T.
    Kobayashi, K.
    Suemasu, T.
    THIN SOLID FILMS, 2006, 508 (1-2) : 371 - 375
  • [38] Ion-beam induced sequential epitaxy of α, β and γ-FeSi2 in Si(100) at 320 °C
    Maltez, R.L.
    Behar, M.
    Lin, X.W.
    Nuclear Instruments & Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1995, 106 (1-4):
  • [39] Photoluminescence Lifetime and Structure of Molecular Beam Epitaxy Porous Si1 − xGex Grown on Si
    B. Ünal
    M. Parkinson
    S.C. Bayliss
    T. Naylor
    D. Schröder
    Journal of Porous Materials, 2000, 7 : 143 - 146
  • [40] Time-Resolved Photoluminescence Spectra of Porous Si
    FEI Hao-sheng
    HAN Li
    CHE Yan-long
    NIE Rui-juan and LI Tie-jin(Deparrment of Physics and Deparrment of Chemistry
    Chemical Research in Chinese Universities, 1995, (01) : 58 - 63
12345