Origin of substrate hole current after gate oxide breakdown

被引：0
|
作者：
机构：
[1] Rasras, Mahmoud
[2] Wolf, Ingrid De
[3] Groeseneken, Guido
[4] Degraeve, Robin
[5] 1,Maes, Herman E.
来源：
Rasras, M. | 1600年 / American Institute of Physics Inc.卷 / 91期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] Breakdown modes and their evolution in ultrathin gate oxide
    Lin, HC
    Lee, DY
    Huang, TY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (10): : 5957 - 5963
  • [42] Breakdown modes and their evolution in ultrathin gate oxide
    Lin, Horng-Chih
    Lee, Da-Yuan
    Huang, Tiao-Yuan
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (10): : 5957 - 5963
  • [43] Soft breakdown model of 20 Å gate oxide
    Ko, CY
    Shiue, KY
    Yue, J
    2000 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT, 2000, : 51 - 53
  • [44] Geometry dependence of gate oxide breakdown evolution
    Sun, Y
    Pey, KL
    Tung, CH
    Lombardo, S
    Palumbo, F
    Tang, LJ
    Radhakrishnan, MK
    IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS, 2004, : 57 - 60
  • [45] Gate oxide breakdown phenomena in magnetron plasma
    Sekine, M
    Horioka, K
    Yoshida, Y
    Okano, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (11): : 6268 - 6273
  • [46] Hole trap generation in gate dielectric during substrate hole injection
    Zhang, JF
    Sii, HK
    Chen, AH
    Zhao, CZ
    Uren, MJ
    Groeseneken, G
    Degraeve, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (01) : L1 - L3
  • [47] Thermal conductivity and softening of gate oxide breakdown
    Ko, CY
    Liao, PJ
    Shih, JR
    Wang, JJ
    Peng, YK
    Yue, J
    2002 7TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE, 2002, : 60 - 63
  • [48] Breakdown and defect generation in ultrathin gate oxide
    Depas, M
    Vermeire, B
    Heyns, MM
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (01) : 382 - 387
  • [49] Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFET's
    Yale Univ, New Haven, United States
    IEEE Electron Device Lett, 10 (391-393):
  • [50] Polarity-dependent tunneling current and oxide breakdown in dual-gate CMOSFET's
    Shi, Y
    Ma, TP
    Prasad, S
    Dhanda, S
    IEEE ELECTRON DEVICE LETTERS, 1998, 19 (10) : 391 - 393
12345