共 50 条
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- [2] EFFECT OF HEAT TREATMENT ON GALLIUM ARSENIDE HEAVILY DOPED WITH TELLURIUMSOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 240 - &GRISHINA, SPMILVIDSK.MGOSVENSKI.VBFISTUL, VI
- [3] LUMINESCENCE OF EPITAXIAL GALLIUM-ARSENIDE HEAVILY DOPED WITH SILICONSOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (11): : 1333 - 1334KOVALENKO, VFPROKHOROVICH, AV
- [5] INFLUENCE OF HEAT TREATMENT ON ELECTRICAL PROPERTIES OF HEAVILY DOPED N-TYPE GALLIUM ARSENIDESOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (07): : 813 - &MILVIDSK.MGOSVENSKI.VBFISTUL, VIOMELYANO.EMGRISHINA, SP
- [6] ELECTRON-MICROSCOPY STUDY OF EFFECTS OF ANNEALING ON DEFECT STRUCTURE OF HEAVILY SILICON-DOPED GALLIUM-ARSENIDEPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02): : 657 - 669NARAYANAN, GHKACHARE, AH
- [7] ELECTRON MOBILITY IN HEAVILY DOPED GALLIUM-ARSENIDEJOURNAL OF APPLIED PHYSICS, 1973, 44 (02) : 715 - 722STEVENS, EHYEE, SS
- [8] PROPERTIES OF ELECTRONIC SPECTRUM IN HEAVILY DOPED GALLIUM ARSENIDESOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (10): : 2461 - &FISTUL, VIAGAEV, AM
- [9] MICROINHOMOGENEITIES OF IMPURITY DISTRIBUTION IN HEAVILY DOPED GALLIUM ARSENIDESOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (04): : 427 - &PROSHKO, GPSHVEIKIN, VI
- [10] HEAT TREATMENT OF GALLIUM ARSENIDEJOURNAL OF APPLIED PHYSICS, 1960, 31 (08) : 1428 - 1430EDMOND, JT
