Research on CIS and CIGS thin film solar cells

被引：0
|
作者：
Sun, Y. [1 ]
Wang, J.Q. [1 ]
Du, Z.F. [1 ]
Shu, B.J. [1 ]
Yu, G. [1 ]
Wen, G.Z. [1 ]
Zhou, Z.H. [1 ]
Sun, J. [1 ]
Li, C.J. [1 ]
Zhang, L.H. [1 ]
机构：
[1] Inst. of Photoelectron. Technol., Nankai Univ., Tianjin 300071, China
来源：
Taiyangneng Xuebao/Acta Energiae Solaris Sinica | 2001年 / 22卷 / 02期
关键词：
Annealing - Copper compounds - Semiconductor junctions - Thin films;
D O I：
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中图分类号：
学科分类号：
摘要：
P type CIS (abbreviation of CuInxSe2) and CIGS (abbreviation of CuIn1-xGaxSe2) thin films were fabricated by evaporating selenylation method, and so are N type CdS. They compose heterogeneous PN junction solar cell. After annealing, the cell efficiencies reach 8.83% and 9.13% respectively. CIS fabricating technology and key problems were discussed. The opinions about annealing were given.
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页码：192 / 195
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