Preparation of aluminum nitride films using pulsed laser deposition

被引：0
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作者：
Fudan Univ., Shanghai 200433, China [1 ]
机构：
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2001年 / 28卷 / 03期
关键词：
Aluminum nitride - Annealing - Laser ablation - Pulsed laser deposition - Substrates;
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学科分类号：
摘要：
This paper describes the preparation of AlN films using pulsed laser deposition. Smooth and highly transparent AlN films were deposited on Si (100) substrates. The gap of the films was determined to be 5.7 eV. The effects of substrate temperature and annealing temperature were also examined.
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页码：272 / 274
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