Deep-level defects in AlGaN/GaN heterostructures grown using rf-plasma-assisted molecular beam epitaxy

被引：0
|
作者：
Park, Chan Jin [1 ]
Park, Young Shin [1 ]
Lee, Ho Sang [1 ]
Yoon, Im-Taek [1 ]
Kang, Tae Won [1 ]
Cho, Hoon Young [1 ]
Oh, Jae-Eung [2 ]
Wang, Kang L. [3 ]
机构：
[1] QSRC, Department of Physics, Dongguk University, Seoul 100-715, Korea, Republic of
[2] School of Electrical and Computer Engineering, Hanyang University, Ansan 325-781, Korea, Republic of
[3] Electrical Engineering Department, University of California at Los Angeles, Los Angeles, CA 90095-1594, United States
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2005年 / 44卷 / 4 A期
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摘要：
18
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页码：1722 / 1725
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