Ion beam studies of CdTe films epitaxially grown on Si, GaAs and sapphire substrates

被引：0
|
作者：
Inst Tecnologico e Nuclear, Sacavem, Portugal [1 ]
机构：
来源：
Nucl Instrum Methods Phys Res Sect B | / 220-224期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE
    DUMIN, DJ
    JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) : 1909 - &
  • [32] SELENIUM FILMS EPITAXIALLY GROWN ON TELLURIUM SUBSTRATES
    ELAZAB, M
    SEWELL, PB
    CHAMPNESS, CH
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 381 - 400
  • [33] SELENIUM FILMS EPITAXIALLY GROWN ON TELLURIUM SUBSTRATES
    ELAZAB, M
    JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (06) : 1250 - 1250
  • [34] Optical and electrical studies of arsenic-implanted HgCdTe films grown c with molecular beam epitaxy on GaAs and Si substrates
    Izhnin, I. I.
    Voitsekhovsky, A. V.
    Korotaev, A. G.
    Fitsych, O. I.
    Bonchyk, A. Yu.
    Savytskyy, H. V.
    Mynbaev, K. D.
    Varavin, V. S.
    Dvoretsky, S. A.
    Mikhailov, N. N.
    Yakushev, M. V.
    Jakiela, R.
    INFRARED PHYSICS & TECHNOLOGY, 2017, 81 : 52 - 58
  • [35] TEM STUDIES OF EPITAXIAL CDTE AND (HG, CD)TE GROWN BY MOVPE ON GAAS AND CDTE SUBSTRATES
    BROWN, PD
    HAILS, JE
    RUSSELL, GJ
    WOODS, J
    JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) : 511 - 515
  • [36] Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates
    R. N. Jacobs
    M. Jaime Vasquez
    C. M. Lennon
    C. Nozaki
    L. A. Almeida
    J. Pellegrino
    J. Arias
    C. Taylor
    B. Wissman
    Journal of Electronic Materials, 2015, 44 : 3076 - 3081
  • [37] Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates
    Jacobs, R. N.
    Vasquez, M. Jaime
    Lennon, C. M.
    Nozaki, C.
    Almeida, L. A.
    Pellegrino, J.
    Arias, J.
    Taylor, C.
    Wissman, B.
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (09) : 3076 - 3081
  • [38] Interband optical properties of molecular-beam epitaxially grown GaAs1-xSbx on GaAs substrates
    Ferrini, R
    Geddo, M
    Guizzetti, G
    Patrini, M
    Franchi, S
    Bocchi, C
    Germini, F
    Baraldi, A
    Magnanini, R
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) : 4706 - 4708
  • [39] Ellipsometric studies on thin silver films epitaxially grown on Si(111)
    Masten, A
    Wissmann, P
    THIN SOLID FILMS, 1999, 343 : 187 - 190
  • [40] STRESS-INDUCED MIXING OF LIGHT AND HEAVY EXCITON-STATES IN THIN-FILMS OF CDTE AND CDMNTE EPITAXIALLY GROWN ON GAAS SUBSTRATES
    ITOH, T
    SHINONE, K
    KATAGIRI, N
    FURUMIYA, M
    TEZUKA, T
    JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) : 835 - 839
12345