Effect of long-term annealing on the electrical properties of SI-GaAs

被引：0
|
作者：
Nakamura, Yoshio [1 ]
Ohtsuki, Yasuo [1 ]
Kikuta, Toshio [1 ]
机构：
[1] Furukawa Electric Co, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27 pt 2卷 / 06期
关键词：
Heat Treatment--Annealing;
D O I：
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学科分类号：
摘要：
The effect of long-term annealing on the electrical properties of semi-insulating (SI) GaAs has been investigated from the viewpoint of both carbon concentration and cooling process following high-temperature heat treatment. Resistivity decreased after slow cooling, but increased after fast cooling; these changes were enhanced in the low carbon concentration region. It was found that the change in electrical properties in the slow cooling process was strongly related to the increase in the donor located at 0.4 eV to approximately 0.5 eV below the conduction band.
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