IN-DEPTH PROFILE MEASUREMENTS OF Cr-RELATED LUMINESCENCE LINES IN GaAs.

被引：0

作者：

Fujiwara, Yasufumi ^{[1
]}

Kojima, Atsushi ^{[1
]}

Nishino, Taneo ^{[1
]}

Hamakawa, Yoshihiro ^{[1
]}

机构：

[1] Osaka Univ, Dep of Electrical, Engineering, Toyonaka, Jpn, Osaka Univ, Dep of Electrical Engineering, Toyonaka, Jpn

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1985年 / 24卷 / 11期

关键词：

CHROMIUM AND ALLOYS - LUMINESCENCE - Measurements;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The in-depth profiles of two kinds of Cr-related deep luminescence centers, Cr-V//A//s and Cr-Te, in Cr-diffused GaAs crystals were determined from luminescence measurements at 4. 2 K. The Cr-V//A//s center gave a steeper in-depth profile than the Cr-Te center. Analysis of these in-depth profiles of the Cr-V//A//s and Cr-Te centers has enabled us to estimate the diffusion coefficient of the Cr impurity and the arsenic vacancy V//A//s in GaAs crystals. The values obtained are 2 approximately 4 multiplied by 10** minus **1**1 cm**2/s for Cr and 5 approximately 8 multiplied by 10** minus **1**2 cm**2/s for V//A//s, comparable to previously-reported data. A steep decrease in the luminescence intensities of the Cr-related lines at the surface of the samples was also observed, suggesting the existence of residual strain.

引用

页码：1479 / 1483