Influence of screw dislocations on DC characteristics of 6H-SiC metal-semiconductor field-effect transistors

被引:0
|
作者
机构
[1] Aigo, Takashi
[2] Katsuno, Masakazu
[3] Fujimoto, Tatsuo
[4] Yashiro, Hirokatsu
[5] Ohtani, Noboru
来源
Aigo, T. | 1600年 / Japan Society of Applied Physics卷 / 41期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] ELECTRICAL-PROPERTIES OF CDTE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    DREIFUS, DL
    KOLBAS, RM
    TASSITINO, JR
    HARPER, RL
    BICKNELL, RN
    SCHETZINA, JF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (04): : 2722 - 2724
  • [22] Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors
    Klein, PB
    Binari, SC
    Freitas, JA
    Wickenden, AE
    JOURNAL OF APPLIED PHYSICS, 2000, 88 (05) : 2843 - 2852
  • [23] Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC
    Smith, S.R.
    Evwaraye, A.O.
    Mitchel, W.C.
    1600, American Inst of Physics, Woodbury, NY, USA (79):
  • [24] Temperature dependence of the barrier height of metal-semiconductor contacts on 6H-SiC
    Smith, SR
    Evwaraye, AO
    Mitchel, WC
    JOURNAL OF APPLIED PHYSICS, 1996, 79 (01) : 301 - 304
  • [25] A NEW INTERPRETATION OF THE ORIENTATION EFFECT IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    HUANG, QA
    LU, SJ
    TONG, QY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1991, 30 (1A): : L11 - L14
  • [26] Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
    邓小川
    张波
    张有润
    王易
    李肇基
    Chinese Physics B, 2011, 20 (01) : 588 - 592
  • [27] Improved performance of 4H-SiC metal-semiconductor field-effect transistors with step p-buffer layer
    Deng Xiao-Chuan
    Zhang Bo
    Zhang You-Run
    Wang Yi
    Li Zhao-Ji
    CHINESE PHYSICS B, 2011, 20 (01)
  • [28] Influence of in situ argon cleaning of GaAs on Schottky diodes and metal-semiconductor field-effect transistors
    vanHassel, JG
    Heyker, HC
    Kwaspen, JJM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2245 - 2249
  • [29] Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance
    Zhang, AP
    Rowland, LB
    Kaminsky, EB
    Tucker, JB
    Beaupre, RA
    Kretchmer, JW
    Garrett, JL
    Vertiatchikh, A
    Koley, G
    Cha, HY
    Allen, AF
    Cook, J
    Foppes, J
    Edward, BJ
    JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (05) : 437 - 443
  • [30] Influence of 4H-SiC semi-insulating substrate purity on SiC metal-semiconductor field-effect transistor performance
    A. P. Zhang
    L. B. Rowland
    E. B. Kaminsky
    J. B. Tucker
    R. A. Beaupre
    J. W. Kretchmer
    J. L. Garrett
    A. Vertiatchikh
    G. Koley
    H. Y. Cha
    A. F. Allen
    J. Cook
    J. Foppes
    B. J. Edward
    Journal of Electronic Materials, 2003, 32 : 437 - 443