ELECTROMODULATION SPECTRA OF HIGH-RESISTANCE p AND n GaAs DOPED WITH CHROMIUM.

被引：0

作者：

Morozova, V.A.

Ostroborodova, V.V.

机构：

来源：

Moscow University Physics Bulletin (English Translation of Vestnik Moskovskogo Universiteta, Fizik | 1983年 / 38卷 / 01期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：77 / 80

共 50 条

[21] DEPENDENCE OF THE ELECTROABSORPTION SIGNAL ON THE ELECTRIC FIELD IN CRYSTALS OF HIGH-RESISTANCE COMPENSATE GaAs.
Georgobiani, A.N.
Ivanov, L.N.
Todua, P.A.
Soviet Physics - Lebedev Institute Reports (English translation of Kratkie Soobshcheniya po Fizike: Sbornik, AN SSSR, Fizicheskii Inst. im. P.N. Lebedeva), 1979, (02): : 9 - 12
[22] NONLINEAR CAPACITANCES INCORPORATING A P-N JUNCTION WHOSE HIGH-RESISTANCE REGION IS STEP-ALLOYED
SHESTOPA.AM
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 927 - +
[23] PHOTO-MAGNETIC EFFECT ANOMALIES AND THE STATE OF SUBSURFACE LAYER IN HIGH-RESISTANCE CRYSTALS OF GAAS
OSTROBORODOVA, VV
ALKUWITI, MS
VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1979, 20 (02): : 36 - 45
[24] ELECTRO-ABSORPTION IN CHROMIUM-DOPED P-TYPE GAAS
MOROZOVA, VA
OSTROBORODOVA, VV
SHEREMETEV, VN
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (12): : 1394 - 1395
[25] The characteristics of high-resistance layers produced in n-GaAs using MeV-nitrogen implantation for three-dimensional structuring
Miao, J
Tiginyanu, IM
Hartnagel, HL
Irmer, G
Monecke, J
Weiss, BL
APPLIED PHYSICS LETTERS, 1997, 70 (07) : 847 - 849
[26] PHOTOELECTRICAL PROPERTIES OF P-I-N-STRUCTURES ON BASE OF HIGH-RESISTANCE SOLID-SOLUTIONS GA1-XALXAS1 DOPED WITH NI AND CR
RUDOVOL, TV
STAFEEV, VI
SAIDOV, MS
NIKITIN, VV
MAMEDOVA, AZ
ANISIMOVA, ID
RADIOTEKHNIKA I ELEKTRONIKA, 1977, 22 (07): : 1462 - 1465
[27] Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors
Budnitsky, DL
Koretskaya, OB
Novikov, VA
Tolbanov, OP
SIBCON-2005: IEEE International Siberian Conference on Control and Communications, 2005, : 78 - 82
[28] Investigation of low- and high-resistance Ni-Ge-An ohmic contacts to n(+) GaAs using electron microbeam and surface analytical techniques
Lumpkin, NE
Lumpkin, GR
Butcher, KSA
JOURNAL OF MATERIALS RESEARCH, 1996, 11 (05) : 1244 - 1254
[29] HIGH QUALITY SEMI-INSULATING GaAs DOPED WITH CHROMIUM AND OXYGEN.
Fujita, Keiichiro
Nishida, Yasuhiro
Kito, Nobuhiro
Kohe, Kiyohiko
Akai, Shin-ichi
Suzuki, Takashi
Matsumura, Akira
Sumitomo Electric Technical Review, 1980, (19): : 97 - 102
[30] INFLUENCE OF RADIATION ON OPTICAL-PROPERTIES OF HIGH-RESISTANCE SINGLE-CRYSTALS OF GE, GAAS, AND ZNSE
SPITSYN, VI
RYABOV, AI
STELMAKH, NS
PIROGOVA, GN
INORGANIC MATERIALS, 1977, 13 (01) : 19 - 22

← 1 2 3 4 5 →