HIGH CONDUCTIVITY, SHALLOW DOPING IN SILICON BY ION IMPLANTATION AND FURNACE ANNEALING.

被引：0
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作者：
Wu, S. [1 ]
Hodel, M.W. [1 ]
Samadpour, F. [1 ]
机构：
[1] Motorola Semiconductor Products, Sector, Process Technology Lab,, Phoenix, AZ, USA, Motorola Semiconductor Products Sector, Process Technology Lab, Phoenix, AZ, USA
来源：
| 1600年 / B6期
关键词：
ACTIVATION - ANNEALING TEMPERATURE - SHALLOW DOPING;
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