SILICON CARBIDE, A HIGH TEMPERATURE SEMICONDUCTOR.

被引：0
|
作者：
Powell, J.Anthony
机构：
来源：
NASA Technical Memorandum | 1983年
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Electronic applications are described that would benefit from the availability of high temperature semiconductor devices. Comparisons are made among potential materials for these devices and the problems of each are discussed. Recent progress in developing silicon carbide as a high-temperature semiconductor is described.
引用
收藏
相关论文
共 50 条
  • [41] SPIN ECHO IN A VARIBAND SEMICONDUCTOR.
    Volkov, A.S.
    Lipko, A.L.
    Meretliev, Sh.M.
    Tsarenkov, B.V.
    Bulletin of the Academy of Sciences of the U.S.S.R. Physical series, 1985, 50 (02): : 82 - 84
  • [42] CYCLOTRON RESONANCE IN A SUPERLATTICE SEMICONDUCTOR.
    Bass, F.G.
    Lykakh, V.A.
    Tetervov, A.P.
    Soviet physics. Semiconductors, 1980, 14 (12): : 1372 - 1376
  • [43] HIGH-TEMPERATURE SILICON CARBIDE Characterization of State-of-the-Art Silicon Carbide Power Transistors
    Dimarino, Christina
    Burgos, Rolando
    Boroyevich, Dushan
    IEEE INDUSTRIAL ELECTRONICS MAGAZINE, 2015, 9 (03) : 19 - 30
  • [44] Effects of sodium silicate exposure at high temperature on sintered a-silicon carbide and siliconized silicon carbide
    Butt, D.P., 1628, Pharmacotherapy Publications Inc. (72):
  • [45] High Frequency High Voltage Power Conversion with Silicon Carbide Power Semiconductor Devices
    Mao, Saijun
    Wu, Tao
    Lu, Xi
    Popovic, Jelena
    Ferreira, Jan Abraham
    2016 6TH ELECTRONIC SYSTEM-INTEGRATION TECHNOLOGY CONFERENCE (ESTC), 2016,
  • [46] High Temperature Silicon Carbide Power Modules for High Performance Systems
    Lostetter, A. B.
    Hornberger, J.
    McPherson, B.
    Bourne, J.
    Shaw, R.
    Cilio, E.
    Cilio, W.
    Reese, B.
    Heinrichs, E.
    McNutt, T.
    Schupbach, M.
    SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2, 2012, 717-720 : 1219 - 1224
  • [47] CHARGE DENSITY WAVES IN A RELAXATION SEMICONDUCTOR.
    Drozhzhov, Yu.P.
    Soviet physics journal, 1987, 30 (06): : 490 - 497
  • [48] Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon
    Nagornov, Yu. S.
    Kostishko, B. M.
    Mikov, S. N.
    Atazhanov, Sh. R.
    Zolotov, A. V.
    Pchelintseva, E. S.
    TECHNICAL PHYSICS, 2007, 52 (08) : 1093 - 1097
  • [49] Formation of silicon carbide nanocrystals by high-temperature carbonization of porous silicon
    Yu. S. Nagornov
    B. M. Kostishko
    S. N. Mikov
    Sh. R. Atazhanov
    A. V. Zolotov
    E. S. Pchelintseva
    Technical Physics, 2007, 52 : 1093 - 1097
  • [50] High temperature testing of a buck converter using silicon and silicon carbide diodes
    Garuda, VR
    Kazimierczuk, MK
    Ramalingam, ML
    Tolkkinen, L
    Roth, MD
    IECEC-97 - PROCEEDINGS OF THE THIRTY-SECOND INTERSOCIETY ENERGY CONVERSION ENGINEERING CONFERENCE, VOLS 1-4: VOL.1: AEROSPACE POWER SYSTEMS AND TECHNOL; VOL 2: ELECTROCHEMICAL TECHNOL, CONVERSION TECHNOL, THERMAL MANAGEMENT; VOLS 3: ENERGY SYSTEMS, RENEWABLE ENERGY RESOURCES, ENVIRONMENTAL IMPACT, POLICY IMPACTS ON ENERGY; VOL 4: POST DEADLINE PAPERS, INDEX, 1997, : 317 - 322
12345