Role of interfacial roughness on bias-dependent magnetoresistance and transport properties in magnetic tunnel junctions

被引：0
|
作者：
Huang, J.C.A. [1 ]
Hsu, C.Y. [1 ]
Liao, Y.F. [1 ]
Lin, M.Z. [1 ]
Lee, C.H. [1 ]
机构：
[1] Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, Taiwan
来源：
Journal of Applied Physics | 2005年 / 98卷 / 10期
关键词：
The authors would like to thank Professor Y. H. Lee for the kind assistance of using the impedance analyzer. This work has been support by the National Science Council of the ROC under Grant No. NSC 94-2112-M-006-003; Taiwan Spin Research Center of the National Chun Cheng University under Grant No. 93-EC-17-A-01-S1-026; and National Synchrotron Radiation Research Center under Project No. 2004-3-032-1. FIG. 1. (a) The TMR ratio; (b) complex capacitance spectra; (c) x-ray reflectivity with symbols for experimental data and curves for simulation results; and (d) fitting interfacial roughness of top and bottom M-I interfaces from x-ray reflectivity for Ar + -irradiated Co Fe – Al O x – Co Fe MT[!text type='Js']Js[!/text] with irradiation time t Ar = 0; 75; and 300 s . FIG. 2. Normalized TMR falloff curves as a function of V dc ranged from − 400 to 400 mV for Ar + -irradiated Co Fe – Al O x – Co Fe MT[!text type='Js']Js[!/text] with irradiation time t Ar = 0; and 300 s . The inset indicates the patterns of normalized R 0 − R s vs V dc . FIG. 3. (a) The four-point-probe current-voltage curves; (b) bias-dependent complex capacitance spectra in type of Nyquist plots (symbols) in log-log scale and fitting curves (solid curves); (c) fitting interfacial capacitance C i; and (d) fitting interfacial resistance R i for Co Fe – Al O x – Co Fe MT[!text type='Js']Js[!/text] with irradiation time t Ar = 0; and; 300; s;
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