Silicon precipitation induced by argon excimer laser in surface layers of Si3N4

被引：0

作者：

Ohmukai, Masato ^{[1
]}

Naito, Hiroyoshi ^{[1
]}

Okuda, Masahiro ^{[1
]}

Kurosawa, Kou ^{[1
]}

Sasaki, Wataru ^{[1
]}

Matsushita, Tatsuhiko ^{[1
]}

Tsunawaki, Yoshiaki ^{[1
]}

Nozawa, Shigenori ^{[1
]}

Igarashi, Tatsushi ^{[1
]}

机构：

[1] Univ of Osaka Prefecture, Osaka, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1993年 / 32卷 / 8 A期

关键词：

Semiconducting silicon;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

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