Silicon precipitation induced by argon excimer laser in surface layers of Si3N4

被引：0
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作者：
Ohmukai, Masato [1 ]
Naito, Hiroyoshi [1 ]
Okuda, Masahiro [1 ]
Kurosawa, Kou [1 ]
Sasaki, Wataru [1 ]
Matsushita, Tatsuhiko [1 ]
Tsunawaki, Yoshiaki [1 ]
Nozawa, Shigenori [1 ]
Igarashi, Tatsushi [1 ]
机构：
[1] Univ of Osaka Prefecture, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 2: Letters | 1993年 / 32卷 / 8 A期
关键词：
Semiconducting silicon;
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摘要：
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