Investigation of the electron mobility in strained Si1-xGex at high Ge composition

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作者：
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, Vienna [1 ]
A-1040, Austria
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来源：
Int Conf Simul Semicond Process Dev Proc SISPAD | 2002年 / 29-32期
关键词：
Compendex;
D O I：
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2002
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摘要：
Intelligent systems - Capacitive sensors - Electron mobility - High electron mobility transistors - Si-Ge alloys - Impurities - Substrates
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