Cubic polytype inclusions in 4H-SiC

被引:0
|
作者
机构
[1] [1,Iwata, Hisaomi
[2] 1,2,Lindefelt, Ulf
[3] Öberg, Sven
[4] Briddon, Patrick R.
来源
Iwata, H. (hisaomi@ifm.liu.se) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [41] Fabrication and characterization of CuAlO2/4H-SiC heterostructure on 4H-SiC (0001)
    Hu, Jichao
    Li, Dan
    He, Xiaomin
    Wang, Xi
    Xu, Bei
    Zang, Yuan
    Li, Lianbi
    SUPERLATTICES AND MICROSTRUCTURES, 2021, 155
  • [42] Optical properties of 4H-SiC
    Ahuja, R
    da Silva, AF
    Persson, C
    Osorio-Guillén, JM
    Pepe, I
    Järrendahl, K
    Lindquist, OPA
    Edwards, NV
    Wahab, Q
    Johansson, B
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) : 2099 - 2103
  • [43] Boron centers in 4H-SiC
    Aradi, B
    Gali, A
    Deák, P
    Rauls, E
    Frauenheim, T
    Son, NT
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 455 - 458
  • [44] Investigation of the 4H-SiC surface
    Guy, O. J.
    Lodzinski, M.
    Teng, K. S.
    Maffeis, T. G. G.
    Tan, M.
    Blackwood, I.
    Dunstan, P. R.
    Al-Hartomy, O.
    Wilks, S. P.
    Wilby, T.
    Rimmer, N.
    Lewis, D.
    Hopkins, J.
    APPLIED SURFACE SCIENCE, 2008, 254 (24) : 8098 - 8105
  • [45] Modified divacancies in 4H-SiC
    Son, N. T.
    Shafizadeh, D.
    Ohshima, T.
    Ivanov, I. G.
    JOURNAL OF APPLIED PHYSICS, 2022, 132 (02)
  • [46] Identification of divacancies in 4H-SiC
    Son, NT
    Umeda, T
    Isoya, J
    Gali, A
    Bockstedte, M
    Magnusson, B
    Ellison, A
    Morishita, N
    Ohshima, T
    Itoh, H
    Janzén, E
    PHYSICA B-CONDENSED MATTER, 2006, 376 : 334 - 337
  • [47] Ion implantation in 4H-SiC
    Wong-Leung, J.
    Janson, M. S.
    Kuznetsov, A.
    Svensson, B. G.
    Linnarsson, M. K.
    Hallen, A.
    Jagadish, C.
    Cockayne, D. J. H.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2008, 266 (08): : 1367 - 1372
  • [48] Photoluminescence upconversion in 4H-SiC
    Wagner, M
    Ivanov, IG
    Storasta, L
    Bergman, JP
    Magnusson, B
    Chen, WM
    Janzén, E
    APPLIED PHYSICS LETTERS, 2002, 81 (14) : 2547 - 2549
  • [50] Oxynitrides on 4H-SiC(0001)
    Hoffmann, P
    Goryachko, A
    Schmeisser, D
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3): : 270 - 274