Cubic polytype inclusions in 4H-SiC

被引:0
|
作者
机构
[1] [1,Iwata, Hisaomi
[2] 1,2,Lindefelt, Ulf
[3] Öberg, Sven
[4] Briddon, Patrick R.
来源
Iwata, H. (hisaomi@ifm.liu.se) | 1600年 / American Institute of Physics Inc.卷 / 93期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
(Edited Abstract)
引用
收藏
相关论文
共 50 条
  • [1] Cubic polytype inclusions in 4H-SiC
    Iwata, H
    Lindefelt, U
    Öberg, S
    Briddon, PR
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (03) : 1577 - 1585
  • [2] Theoretical study of cubic polytype inclusions in 4H-SiC
    Iwata, H
    Lindefelt, U
    Öberg, S
    Briddon, PR
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 533 - 536
  • [3] Polytype inclusions and triangular stacking faults in 4H-SiC layers grown by sublimation epitaxy
    Syväjärvi, M
    Yakimova, R
    Henry, A
    Janzén, E
    PHYSICA SCRIPTA, 1999, T79 : 64 - 66
  • [4] Polytype Inclusions and Triangular Stacking Faults in 4H-SiC Layers Grown by Sublimation Epitaxy
    Outokumpu Semitronic, Box 255, 17824 Ekerö, Sweden
    不详
    Phys Scr T, (64-66):
  • [5] Thermal and doping dependence of 4H-SiC polytype transformation
    Brillson, LJ
    Tumakha, S
    Jessen, GH
    Okojie, RS
    Zhang, M
    Pirouz, P
    APPLIED PHYSICS LETTERS, 2002, 81 (15) : 2785 - 2787
  • [6] Cubic inclusions in 4H-SIC studied with ballistic electron-emission microscopy
    Ding, Y
    Park, KB
    Pelz, JP
    Palle, KC
    Mikhov, MK
    Skromme, BJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1351 - 1355
  • [7] Polytype stability in seeded sublimation growth of 4H-SiC boules
    Yakimova, R
    Syväjärvi, M
    Iakimov, T
    Jacobsson, H
    Råback, R
    Vehanen, A
    Janzén, E
    JOURNAL OF CRYSTAL GROWTH, 2000, 217 (03) : 255 - 262
  • [8] Step flow and polytype transformation in growth of 4H-SiC crystals
    Liu, Chunjun
    Chen, Xiaolong
    Peng, Tonghua
    Wang, Bo
    Wang, Wenjun
    Wang, Gang
    JOURNAL OF CRYSTAL GROWTH, 2014, 394 : 126 - 131
  • [9] Polytype stability of 4H-SiC seed crystal on solution growth
    Alexander
    Seki, Kazuaki
    Kozawa, Shigeta
    Yamamoto, Yuji
    Ujihara, Toru
    Takeda, Yoshikazu
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 24 - 27
  • [10] Structure of Inclusions in 4° Offcut 4H-SiC Epitaxy
    Mahadik, N. A.
    Stahlbush, R. E.
    Qadri, S. B.
    Glembocki, O. J.
    Alexson, D. A.
    Myers-Ward, R. L.
    Tedesco, J. L.
    Eddy, C. R., Jr.
    Gaskill, D. K.
    SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 315 - 318