Growth and characterization of bulk Si-Ge single crystals

被引：0
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作者：
Honda, Tatsuya [1 ]
Suezawa, Masashi [1 ]
Sumino, Koji [1 ]
机构：
[1] Tohoku Univ, Sendai, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1996年 / 35卷 / 12 A期
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页码：5980 / 5985
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