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- [43] In situ pyrometric interferometry monitoring and control of III-V layered structures during MBE growth: Modeling and implementation SEMICONDUCTOR CHARACTERIZATION: PRESENT STATUS AND FUTURE NEEDS, 1996, : 527 - 531
- [45] MONOLAYER RESOLVED MONITORING OF ALAS GROWTH WITH METALORGANIC MOLECULAR-BEAM EPITAXY BY REFLECTANCE ANISOTROPY SPECTROSCOPY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (01): : 88 - 91
- [46] GROWTH OF MILLIMETER-WAVE DISTRIBUTED GAAS IMPATT STRUCTURES BY MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 269 - 271
- [47] LOW-TEMPERATURE GROWTH OF GAAS AND ALAS-GAAS QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (10): : L868 - L870
- [48] GROWTH OF GAAS ALAS QUANTUM CLUSTERS ON NON-(100)-ORIENTED FACETED GAAS-SURFACES BY MOLECULAR-BEAM EPITAXY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (10): : 959 - 963
- [49] LOW-TEMPERATURE GROWTH OF GaAs AND AlAs-GaAs QUANTUM-WELL LAYERS BY MODIFIED MOLECULAR BEAM EPITAXY. Japanese Journal of Applied Physics, Part 2: Letters, 1986, 25 (10): : 868 - 870
- [50] In situ spectroscopic ellipsometry for monitoring and control of HgCdTe heterostructures grown by molecular beam epitaxy INFRARED APPLICATIONS OF SEMICONDUCTORS - MATERIALS, PROCESSING AND DEVICES, 1997, 450 : 269 - 274