Device temperature and heat generation in power metal-oxide semiconductor field effect transistors

被引:0
|
作者
机构
来源
J Thermophys Heat Transfer | / 2卷 / 185-194期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] COUPLING OF MONTE-CARLO AND DRIFT DIFFUSION METHOD WITH APPLICATIONS TO METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    KOSINA, H
    SELBERHERR, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2283 - L2285
  • [33] Fabrication and electrical characteristics of dual-gate ZnO nanorod metal-oxide semiconductor field-effect transistors
    Kim, Hyeong-Jin
    Lee, Chul-Ho
    Kim, Dong-Wook
    Yi, Gyu-Chul
    NANOTECHNOLOGY, 2006, 17 (11) : S327 - S331
  • [34] HOT-CARRIER DEGRADATION EFFECTS RELEVANT IN REAL OPERATION OF METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    WEBER, W
    QIN, W
    BROX, M
    SCHMITTLANDSIEDEL, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2275 - L2278
  • [35] ANALYTICAL MODEL FOR CIRCUIT SIMULATION WITH QUARTER MICRON METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS - SUBTHRESHOLD CHARACTERISTICS
    MIURAMATTAUSCH, M
    JACOBS, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2279 - L2282
  • [36] DESIGN AND CHARACTERIZATION OF COMPACT 100 NM-SCALE SILICON METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    REEVES, CM
    WIND, SJ
    HOHN, FJ
    LII, YT
    BUCCHIGNANO, JJ
    NEWMAN, TH
    KLAUS, DP
    VOLANT, RP
    KELLER, J
    TEBIN, B
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2917 - 2921
  • [38] Multigate transistors as the future of classical metal–oxide–semiconductor field-effect transistors
    Isabelle Ferain
    Cynthia A. Colinge
    Jean-Pierre Colinge
    Nature, 2011, 479 : 310 - 316
  • [39] Comparison of nanoscale metal-oxide-semiconductor field effect transistors
    Li, YM
    Lee, JW
    Chou, HM
    SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2004, 2004, : 307 - 310
  • [40] Atomistic mesh generation for the simulation of nanoscale metal-oxide-semiconductor field-effect transistors
    Aldegunde, M.
    Seoane, Natalia
    Garcia-Loureiro, A. J.
    Sushko, P. V.
    Shluger, A. L.
    Gavartin, J. L.
    Kalna, K.
    Asenov, A.
    PHYSICAL REVIEW E, 2008, 77 (05):