Device temperature and heat generation in power metal-oxide semiconductor field effect transistors

被引：0
|
作者：
机构：
来源：
J Thermophys Heat Transfer | / 2卷 / 185-194期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Device temperature and heat generation in power metal-oxide semiconductor field effect transistors
    Zhu, L
    Vafai, K
    Xu, L
    JOURNAL OF THERMOPHYSICS AND HEAT TRANSFER, 1999, 13 (02) : 185 - 194
  • [2] Device temperature and heat generation in power metal-oxide semiconductor field effect transistors
    Zhu, L.
    Vafai, K.
    Xu, L.
    Journal of thermophysics and heat transfer, 13 (02): : 185 - 194
  • [3] GaN enhancement mode metal-oxide semiconductor field effect transistors
    Irokawa, Y
    Nakano, Y
    Ishiko, M
    Kachi, T
    Kim, J
    Ren, F
    Gila, BP
    Onstine, AH
    Abernathy, CR
    Pearton, SJ
    Pan, CC
    Chen, GT
    Chyi, JI
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07): : 2668 - 2671
  • [4] FIELD EFFECT TRANSISTORS .2. SURFACE FIELD EFFECT TRANSISTORS (METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS)
    GOECKE, D
    MICROTECNIC, 1967, 21 (05): : 491 - &
  • [5] Toward Low-Power Cryogenic Metal-Oxide Semiconductor Field-Effect Transistors
    Knoch, Joachim
    Richstein, Benjamin
    Han, Yi
    Frentzen, Michael
    Schreiber, Lars Rainer
    Klos, Jan
    Raffauf, Lena
    Wilck, Noel
    Koenig, Dirk
    Zhao, Qing-Tai
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (13):
  • [6] Effect of substrate on "on-resistance" of a power metal-oxide semiconductor field-effect transistor device
    Chiou, HD
    Gaffney, K
    DeNicholas, J
    Chang, G
    Lu, SF
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (04) : 1570 - 1574
  • [7] LOW-TEMPERATURE RECOMBINATION LIFETIME IN SI METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    ZETTERLUND, B
    STECKL, AJ
    APPLIED PHYSICS LETTERS, 1981, 39 (02) : 155 - 156
  • [8] INTEGRATION OF PLASMONIC DEVICE WITH METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS
    Sakai, Hiroki
    Aihara, Takuma
    Fukuhara, Masashi
    Ota, Masashi
    Kimura, Yu
    Ishii, Yuya
    Fukuda, Mitsuo
    2014 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN), 2014, : 177 - 178
  • [9] Metal-oxide semiconductor field-effect transistors using single ZnO nanowire
    Heo, YW
    Kang, BS
    Tien, LC
    Kwon, Y
    La Roche, JR
    Gila, BP
    Ren, F
    Pearton, SJ
    Norton, DP
    Progress in Compound Semiconductor Materials IV-Electronic and Optoelectronic Applications, 2005, 829 : 327 - 332
  • [10] Metal-oxide semiconductor field-effect transistors using Schottky barrier drains
    Huang, FJ
    O, KK
    ELECTRONICS LETTERS, 1997, 33 (15) : 1341 - 1342
12345