Si/Si1-xGex and Si/Si1-yCy heterostructures: Materials for high-speed field-effect transistors

被引:0
|
作者
Univ Linz, Linz, Austria [1 ]
机构
来源
Thin Solid Films | / 1-10期
关键词
Number:; P; 12143-PHY; Acronym:; FWF; Sponsor: Austrian Science Fund; 5809; OeNB; Sponsor: Oesterreichische Nationalbank;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
    Christensen, J.S. (jens@imit.kth.se), 1600, American Institute of Physics Inc. (94):
  • [22] Annealing Behavior of Si1-xGex/Si Heterostructures
    于卓
    李代宗
    成步文
    李成
    雷震霖
    黄昌俊
    张春辉
    余金中
    王启明
    梁骏吾
    半导体学报, 2000, (10) : 962 - 965
  • [23] Electrical assessment of Si1-xGex/Si heterostructures
    Lysenko, V.S.
    Tyagulski, I.P.
    Gomeniuk, Y.V.
    Osiyuk, I.N.
    Patel, C.J.
    Nur, O.
    Willander, M.
    Journal De Physique. IV : JP, 1998, 8 (03): : 3 - 87
  • [24] Valley splitting in Si/Si1-xGex heterostructures
    Balasubramanian, S
    Venkataraman, V
    SOLID STATE COMMUNICATIONS, 1996, 100 (07) : 525 - 528
  • [25] The electrical assessment of Si1-xGex/Si heterostructures
    Lysenko, VS
    Tyagulski, IP
    Gomeniuk, YV
    Osiyuk, IN
    Patel, CJ
    Nur, O
    Willander, M
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P3): : 87 - 90
  • [26] INVESTIGATION OF THE HIGH-TEMPERATURE BEHAVIOR OF STRAINED SI1-YCY/SI HETEROSTRUCTURES
    FISCHER, GG
    ZAUMSEIL, P
    BUGIEL, E
    OSTEN, HJ
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) : 1934 - 1937
  • [27] Gate Influence on the Layout Sensitivity of Si1-xGex S/D and Si1-yCy S/D Transistors Including an Analytical Model
    Eneman, Geert
    Simoen, Eddy
    Verheyen, Peter
    De Meyer, Kristin
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (10) : 2703 - 2711
  • [28] Study of Si1-xGex/Si/Si1-xGex heterostructures with abrupt interfaces for ultrahigh mobility FETs
    Sugii, N
    Nakagawa, K
    Yamaguchi, S
    Miyao, M
    III-V AND IV-IV MATERIALS AND PROCESSING CHALLENGES FOR HIGHLY INTEGRATED MICROELECTRONICS AND OPTOELECTRONICS, 1999, 535 : 269 - 274
  • [29] Theory of valence and conduction band offsets in Si/Si1-yCy heterostructures
    Ekpunobi, AJ
    Animalu, AOE
    SUPERLATTICES AND MICROSTRUCTURES, 2002, 31 (05) : 253 - 256
  • [30] Influence of doping on thermal stability of Si/Si1-xGex/Si heterostructures
    Suvar, E
    Christensen, J
    Kuznetsov, A
    Radamson, HH
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 102 (1-3): : 53 - 57