Surface Preparation of III-V Compounds by Reactive Ion Etching in a Methane-Based Gas Mixture.

被引：0

作者：

Henry, L. ^{[1
]}

Vaudry, C. ^{[1
]}

Alnot, P. ^{[1
]}

Olivier, J. ^{[1
]}

机构：

[1] CNET, Lannion, Fr, CNET, Lannion, Fr

来源：

Le Vide, les couches minces | 1988年 / 43卷 / 241期

关键词：

GASES; -; IONS; METHANE; ORGANOMETALLICS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Dry etching techniques are becoming increasingly important, and recently a Metal Organic Reactive Ion Etching (MORIE) process usable in micro-opto-electronic technology has been reported. This process appears usable also for surface treatments; for example, before epitaxial growth.

引用

页码：169 / 170

共 47 条

[21] CHLORINE-BASED SMOOTH REACTIVE ION-BEAM ETCHING OF INDIUM-CONTAINING III-V COMPOUND SEMICONDUCTOR
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[26] Nanometer-Scale Vertical-Sidewall Reactive Ion Etching of InGaAs for 3-D III-V MOSFETs
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IEEE ELECTRON DEVICE LETTERS, 2014, 35 (05) : 521 - 523
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MICROELECTRONIC ENGINEERING, 2009, 86 (02) : 122 - 127
[28] COMPARISON OF CH4/H2/AR REACTIVE ION ETCHING AND ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING OF IN-BASED III-V ALLOYS
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