Reply to Comment on `Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formation'

被引：0
|
作者：
Hecht, M. H.
机构：
来源：
Physical Review B: Condensed Matter | / 57卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] QUENCHING OF LOW-TEMPERATURE EXCITON LUMINESCENCE EMITTED BY PURE CADMIUM-SULFIDE CRYSTALS WITH A SCHOTTKY-BARRIER
    KARPENKO, SL
    KOROTAEV, AM
    SEISYAN, RP
    YAKOBSON, MA
    MYULLER, GO
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (09): : 1024 - 1028
  • [22] SCHOTTKY-BARRIER FORMATION FOR IN DEPOSITED ON GAAS(110) - THE LOW COVERAGE LIMIT
    ORTEGA, J
    RINCON, R
    GARCIAVIDAL, FJ
    FLORES, F
    APPLIED SURFACE SCIENCE, 1993, 65-6 : 766 - 771
  • [23] PHOTOEMISSION STUDY OF AU SCHOTTKY-BARRIER FORMATION ON GASB, GAAS, AND INP USING SYNCHROTRON RADIATION
    CHYE, PW
    LINDAU, I
    PIANETTA, P
    GARNER, CM
    SU, CY
    SPICER, WE
    PHYSICAL REVIEW B, 1978, 18 (10): : 5545 - 5559
  • [24] Low temperature transport spectroscopy of defects using Schottky-barrier MOSFETs
    Calvet, L. E.
    Meshkov, G. A.
    Strupiechonski, E.
    Toubestani, D.
    Snyder, J. P.
    Fortuna, F.
    Wernsdorfer, W.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (23-24) : 5136 - 5139
  • [25] BISMUTH ON GAAS(110) - CHARACTERIZATION OF GROWTH MODE AND SCHOTTKY-BARRIER FORMATION AT LOW AND ROOM-TEMPERATURE
    ESSER, N
    HUNERMANN, M
    RESCH, U
    SPALTMANN, D
    GEURTS, J
    ZAHN, DRT
    RICHTER, W
    WILLIAMS, RH
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 169 - 173
  • [26] EFFECT OF CHARGE CARRIER CONCENTRATION IN A SEMICONDUCTOR ON VOLTAGE-CURRENT CHARACTERISTICS OF DIODES WITH SCHOTTKY-BARRIER AT LOW-TEMPERATURE
    BOZHKOV, VG
    MALAKHOVSKII, OY
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1986, 29 (10): : 87 - 93
  • [27] SOFT-X-RAY PHOTOEMISSION MEASUREMENT OF SCHOTTKY-BARRIER FORMATION AT THE PD-SI INTERFACE
    PURTELL, R
    HO, PS
    RUBLOFF, GW
    HOLINGER, G
    THIN SOLID FILMS, 1983, 104 (3-4) : 337 - 337
  • [28] SCHOTTKY-BARRIER FORMATION AT LOW METAL COVERAGES - A CONSISTENT MOLECULAR-ORBITAL CALCULATION FOR K ON GAAS(110) - COMMENT
    MCLEAN, AB
    HESKETT, D
    TANG, DX
    DINARDO, NJ
    PHYSICAL REVIEW LETTERS, 1990, 65 (04) : 524 - 524
  • [29] Low temperature measurements of Schottky-barrier SOI-MOSFETs with dopant segregation
    Zhang, M
    Knoch, J
    Zhao, QT
    Fox, A
    Lenk, S
    Mantl, S
    ELECTRONICS LETTERS, 2005, 41 (19) : 1085 - 1086
  • [30] Low temperature passivation of silicon surfaces for enhanced performance of Schottky-barrier MOSFET
    Molina-Reyes, Joel
    Cuellar-Juarez, Adriana Mercedes
    NANOTECHNOLOGY, 2024, 35 (10)
12345