Compact electron cyclotron resonance plasma-etching reactor employing permanent magnet

被引:0
|
作者
机构
[1] Narai, Akira
[2] Hashimoto, Tetsuro
[3] Ichihashi, Hideki
[4] Shindo, Haruo
[5] Horiike, Yasuhiro
来源
Narai, Akira | 1600年 / 30期
关键词
Semiconducting Silicon;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] COMPACT ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING REACTOR EMPLOYING PERMANENT-MAGNET
    NARAI, A
    HASHIMOTO, T
    ICHIHASHI, H
    SHINDO, H
    HORIIKE, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11B): : 3159 - 3163
  • [2] CRYOGENIC ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING
    WHANG, KW
    LEE, SH
    LEE, HJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1307 - 1312
  • [3] ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING OF PHOTORESIST AT CRYOGENIC TEMPERATURES
    VARHUE, W
    BURROUGHS, J
    MLYNKO, W
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (07) : 3050 - 3057
  • [4] Characterization of a permanent magnet electron cyclotron resonance plasma source
    Mantei, T.O.
    Ohale, S.
    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, 1991, 9 (01): : 26 - 28
  • [5] ELECTRON-CYCLOTRON-RESONANCE PLASMA REACTOR FOR CRYOGENIC ETCHING
    AYDIL, ES
    GREGUS, JA
    GOTTSCHO, RA
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1993, 64 (12): : 3572 - 3584
  • [6] Diagnostics of fluorocarbon radicals in a large-area permanent magnet electron cyclotron resonance etching plasma
    Den, S
    Kuno, T
    Ito, M
    Hori, M
    Goto, T
    Hayashi, Y
    Sakamoto, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (12B): : 6528 - 6533
  • [7] DEGRADATION-FREE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING OF INP
    PEARTON, SJ
    CHAKRABARTI, UK
    PERLEY, AP
    CONSTANTINE, C
    JOHNSON, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (09) : 929 - 933
  • [8] DAMAGE INDUCED BY ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING ON SILICON SURFACE
    WASHIDZU, G
    HARA, T
    HIYOSHI, J
    SASAKI, M
    SUZUKI, Y
    UKAI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05): : 1045 - 1049
  • [9] ANISOTROPIC HIGHLY SELECTIVE ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING OF POLYSILICON
    GADGIL, PK
    DANE, D
    MANTEI, TD
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 1303 - 1306
  • [10] ELECTRON-CYCLOTRON RESONANCE PLASMA-ETCHING USING DOWNSTREAM MAGNETIC CONFINEMENT
    CHOQUETTE, KD
    WETZEL, RC
    FREUND, RS
    KOPF, RF
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06): : 2725 - 2728