RECRYSTALLIZATION OF Ge ON SiO2 USING SrF2 SEED BY PSEUDO-LINE ELECTRON BEAM ANNEALING.

被引:0
|
作者
Yamagishi, Chouho [1 ]
Kimura, Tamotsu [1 ]
Akiyama, Masahiro [1 ]
Kaminishi, Katsuzo [1 ]
机构
[1] Oki Electric Industry Co, Tokyo, Jpn, Oki Electric Industry Co, Tokyo, Jpn
来源
| 1600年 / 26期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] ELECTRON TRAPPING PROPERTIES OF GE-IMPLANTED SIO2
    DENIJS, JMM
    BALK, P
    MICROELECTRONIC ENGINEERING, 1993, 22 (1-4) : 123 - 126
  • [22] Electron microscopy study of the growth of Ge nanoparticles in SiO2
    Bonafos, C.
    Garrido, B.
    Lopez, M.
    Perez-Rodriguez, A.
    Morante, J.R.
    Kihn, Y.
    Assayag, G. Ben
    Claverie, A.
    2000, American Inst of Physics, Woodbury, NY, USA (76)
  • [23] An electron microscopy study of the growth of Ge nanoparticles in SiO2
    Bonafos, C
    Garrido, B
    Lopez, M
    Perez-Rodriguez, A
    Morante, JR
    Kihn, Y
    Ben Assayag, G
    Claverie, A
    APPLIED PHYSICS LETTERS, 2000, 76 (26) : 3962 - 3964
  • [24] Evolution of SiO2/Ge/HfO2(Ge) multilayer structure during high temperature annealing
    Sahin, D.
    Yildiz, I.
    Gencer, A. I.
    Aygun, G.
    Slaoui, A.
    Turan, R.
    THIN SOLID FILMS, 2010, 518 (09) : 2365 - 2369
  • [25] Stability of electron-beam poling in N or Ge-doped H:SiO2 films
    Liu, Q.
    Poumellec, B.
    Blum, R.
    Girard, G.
    Bouree, J. -E.
    Kudlinski, A.
    Martinelli, G.
    APPLIED PHYSICS LETTERS, 2006, 88 (24)
  • [26] In situ observation of electron-beam-induced ripening of Ge clusters in thin SiO2 layers
    Klimenkov, M
    Matz, W
    von Borany, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2000, 168 (03): : 367 - 374
  • [27] Atomistic simulation of the equation of state of SrF2 using electron gas interionic potentials
    Francisco, E
    Blanco, MA
    Palacios, P
    HIGH PRESSURE RESEARCH, 2002, 22 (01) : 227 - 230
  • [28] Generation, relaxation and annealing of Si/SiO2 charges induced by low-energy electron beam
    Koveshnikov, Sergei
    Knyazev, Maxim
    Soltanovich, Oleg
    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2021, 274
  • [29] Ion beam synthesis of Ge nanocrystals embedded in SiO2 matrix
    Rao, N. Srinivasa
    Pathak, A. P.
    Kabiraj, D.
    Khan, S. A.
    Panigrahi, B. K.
    Nair, K. G. M.
    Avasthi, D. K.
    ION BEAMS AND NANO-ENGINEERING, 2010, 1181 : 99 - +
  • [30] Ion beam synthesis and characterization of Ge nanocrystals embedded in SiO2
    Giri, P. K.
    Kesavamurthy, R.
    Panigrahi, B. K.
    Nair, K. G. M.
    Sarma, S.
    Srinivasan, A.
    NANO-SCALE MATERIALS: FROM SCIENCE TO TECHNOLOGY, 2006, : 365 - 374