INFLUENCE OF HYDROSTATIC PRESSURE ON THE FUNDAMENTAL ABSORPTION EDGE OF TlGaSe2, TlGaS2, AND TlInS2 CRYSTALS.

被引：0

作者：

Allakhverdiev, K.R. ^{[1
]}

Mamedov, T.G. ^{[1
]}

Panfilov, V.V. ^{[1
]}

Shukyurov, M.M. ^{[1
]}

Subbotin, S.I. ^{[1
]}

机构：

[1] Acad of Sciences of the Azerbaijan, SSR, Inst of Physics, Baku, USSR, Acad of Sciences of the Azerbaijan SSR, Inst of Physics, Baku, USSR

来源：

Physica Status Solidi (B) Basic Research | 1985年 / 131卷 / 01期

关键词：

BAND STRUCTURE - SEMICONDUCTING GALLIUM COMPOUNDS - Pressure Effects - SEMICONDUCTING INDIUM COMPOUNDS - Pressure Effects;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The influence of hydrostatic pressure up to 1. 3 GPa on the fundamental absorption edge of TlGaSe//2, TlGaS//2, and TlInS//2 crystals is investigated. It is found that the behavior of the fundamental absorption edge of TlGaSe//2, TlGaS//2, and TlInS//2 crystals with pressure can be explained in the framework of the hypothesis about the presence of phase transitions in the pressure range 0. 3 to 0. 9 GPa. The presence of phase transitions in TlGaSe//2 and TlGaS//2 crystals agrees with the data of Raman scattering in these crystals under hydrostatic pressure.

引用

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