Modeling of an In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells structure using photocurrent spectroscopy

Determination of parameters is important for application to opto-electronic devices. We determined some band parameters in InGaAs/InAlAs multi-quantum wells under no electric field before. In this paper, we drew absorption coefficient spectra in the quantum confined Stark effect using a wave equation for which our experimental parameters were substituted. The calculated transition energies and the absorption coefficients agreed quantitatively with the experimental's at any electric field. Thus, our modeling will reproduce the above photocurrent experiments on the QCSE, quantitatively.