Room temperature scanning photoluminescence for mapping the lifetime and the doping density in epitaxial layers

被引：0
|
作者：
Nuban, M.F. [1 ]
Krawczyk, S.K. [1 ]
Bejar, M. [1 ]
机构：
[1] Ecole Centrale de Lyon, Ecully, France
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1997年 / B44卷 / 1-3期
关键词：
Energy gap - Photoluminescence - Semiconducting gallium compounds - Semiconducting indium phosphide - Semiconductor doping - Substrates;
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学科分类号：
摘要：
Recently, we demonstrated the potential of room temperature spectrally integrated scanning photoluminescence (SPL) measurements for mapping the lifetime and the doping density in bulk compound semiconductor substrates. In this work, the possibilities of our new technique are extended for mapping the lifetime and the doping uniformity in single epitaxial layers or layer of a narrow bandgap semiconductor located between two layers of semiconductors with a larger gap. In particular, we present and discuss experimental results obtained on InGaAs/InP and InP/InGaAs/InP structures.
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页码：125 / 129
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