Photoluminescence studies of In-doped GaN:Mg films

被引：0
|
作者：
机构：
[1] Chang, Fu-Chin
[2] Chou, Wu-Chin
[3] Chen, Wen-Hsiung
[4] Lee, Ming-Chih
[5] Chen, Wei-Kuo
[6] Huang, Huai-Ying
来源：
Chang, F.-C. | 1600年 / Japan Society of Applied Physics卷 / 44期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Photoluminescence studies of In-doped GaN:Mg films
    Chang, FC
    Chou, WC
    Chen, WH
    Lee, MC
    Chen, WK
    Huang, HY
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (10): : 7504 - 7506
  • [2] Growth and characteristics of in-doped GaN thin films
    Kim, CS
    Yoon, HS
    Choi, RJ
    Cho, HK
    Kang, DS
    Hong, CH
    Hahn, YB
    Lee, HJ
    INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, 2002, : 116 - 119
  • [3] Photoluminescence of rapid-thermal annealed Mg-doped GaN films
    Wang, LS
    Fong, WK
    Surya, C
    Cheah, KW
    Zheng, WH
    Wang, Z
    1999 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, 1999, : 154 - 157
  • [4] Photoluminescence of rapid-thermal annealed Mg-doped GaN films
    Wang, LS
    Fong, WK
    Surya, C
    Cheah, KW
    Zheng, WH
    Wang, ZG
    SOLID-STATE ELECTRONICS, 2001, 45 (07) : 1153 - 1157
  • [5] Optical and electrical investigations of isoelectronic In-doped GaN films
    Shu, CK
    Lee, WH
    Pan, YC
    Chen, CC
    Lin, HC
    Ou, J
    Chen, WH
    Chen, WK
    Lee, MC
    SOLID STATE COMMUNICATIONS, 2000, 114 (05) : 291 - 293
  • [6] Photoluminescence spectroscopy of Mg-doped GaN
    Sheu, JK
    Su, YK
    Chi, GC
    Pong, BJ
    Chen, CY
    Huang, CN
    Chen, WC
    JOURNAL OF APPLIED PHYSICS, 1998, 84 (08) : 4590 - 4594
  • [7] Raman scattering and photoluminescence of Mg doped GaN films grown by molecular beam epitaxy
    Popovici, G
    Xu, GY
    Botchkarev, A
    Kim, W
    Tang, H
    Salvador, A
    Stange, R
    White, JO
    Morkoc, H
    GALLIUM NITRIDE AND RELATED MATERIALS II, 1997, 468 : 219 - 224
  • [8] Photoluminescence studies of undoped and doped wurtzite GaN films deposited on sapphire substrates
    Freitas, JA
    Wickenden, AE
    Koleske, DD
    Khan, MA
    COMPOUND SEMICONDUCTORS 1996, 1997, (155): : 873 - 876
  • [9] Time resolved photoluminescence of cubic Mg doped GaN
    Seitz, R
    Gaspar, C
    Monteiro, T
    Pereira, E
    Schoettker, B
    Frey, T
    As, DJ
    Schikora, D
    Lischka, K
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 225 - 230
  • [10] Pressure and time-resolved photoluminescence studies of Mg-doped and undoped GaN
    Teisseyre, H
    Kozankiewicz, B
    Leszczynski, M
    Grzegory, I
    Suski, T
    Bockowski, M
    Porowski, S
    Pakula, K
    Mensz, PM
    Bhat, IB
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 198 (01): : 235 - 241
12345