Time resolved photoluminescence of cubic Mg doped GaN

被引：1

作者：

Seitz, R ^{[1
]}

Gaspar, C ^{[1
]}

Monteiro, T ^{[1
]}

Pereira, E ^{[1
]}

Schoettker, B ^{[1
]}

Frey, T ^{[1
]}

As, DJ ^{[1
]}

Schikora, D ^{[1
]}

Lischka, K ^{[1
]}

机构：

[1] Univ Aveiro, Dept Phys, P-3800 Aveiro, Portugal

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999 | 1999年 / 572卷

关键词：

D O I：

10.1557/PROC-572-225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mg doped cubic GaN layers were studied by steady state and time resolved photoluminescence. The blue emission due to Mg doping can be decomposed in three bands. The decay curves and the spectral shift with time delays indicates donor-acceptor pair behaviour. This can be confirmed by excitation density dependent measurements. Furthermore temperature dependent analysis shows that the three emissions have one impurity in common. We propose that this is an acceptor level related to the Mg incorporation and the three deep donor levels are due to compensation effects.

引用

页码：225 / 230

页数：6

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