STATUS OF IC APPLICATIONS OF ION IMPLANTATION.

被引：0
|
作者：
Smith, T.C. [1 ]
机构：
[1] Motorola Semiconductor Group, Mesa,, AZ, USA, Motorola Semiconductor Group, Mesa, AZ, USA
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B21卷 / 2-4期
关键词：
INTEGRATED CIRCUITS;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
After more than a decade of production use in the semiconductor industry, ion implantation is a key process in virtually all device technologies. Some present and future applications are reviewed, along with processing trends and manufacturing concerns. Competing solutions to problems and alternate means to obtain device performance improvements will be discussed. The related trends in equipment development are considered with reference to their potential applications in production.
引用
收藏
页码：90 / 95
相关论文
共 50 条
  • [31] MODELING THE PROFILE OF THE DEPTH DISTRIBUTION OF IMPURITIES IN ION IMPLANTATION.
    Kadmenskii, A.G.
    Faizrakhmanov, V.R.
    Optoelectronics, Instrumentation and Data Processing (English translation of Avtometriya), 1986, (05): : 67 - 72
  • [32] Optical property changes of sapphire induced by ion implantation.
    Ikeyama, M
    Tazawa, M
    Morikawa, H
    Chayahara, A
    ION BEAM MODIFICATION OF MATERIALS, 1996, : 1077 - 1080
  • [33] ELECTROCHEMICAL CORROSION BEHAVIOR OF ALLOYS FORMED BY ION IMPLANTATION.
    Covino Jr., B.S.
    Sartwell, B.D.
    Conner, G.R.
    Needham Jr., P.B.
    Report of Investigations - United States, Bureau of Mines, 1980, (8431):
  • [34] IMPROVEMENT OF SECONDARY ELECTRON EMISSION CHARACTERISTICS BY ION IMPLANTATION.
    Liu, Xiang-huai
    Tsou, Shih-chang
    Tu, Yu-shen
    1600, (B21): : 2 - 4
  • [35] MULTI-MeV ACCELERATOR SYSTEM FOR ION IMPLANTATION.
    DiBitonto, Daryl
    Huson, F.R.
    McIntyre, Peter M.
    Nassiri, Alireza
    Raparia, Deepak
    Swenson, Charles A.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B24-25 (pt 2 Apr III) : 783 - 786
  • [36] Characterization of nanoclusters in MgO created by means of ion implantation.
    van Huis, MA
    van Veen, A
    Schut, H
    Kooi, BJ
    De Hosson, JTM
    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS, 2004, 792 : 171 - 176
  • [37] The bone response of titanium implant with calcium ion implantation.
    Takamura, R
    Yamamoto, S
    Fujita, R
    Kamiura, Y
    Iida, S
    Komatubara, H
    Takeishi, A
    Yokoyama, A
    Kawasaki, T
    Kohgo, T
    Amemiya, A
    Hanawa, T
    Ukai, H
    Murakami, K
    Hirota, K
    JOURNAL OF DENTAL RESEARCH, 1997, 76 (05) : 1177 - 1177
  • [38] THRESHOLD VOLTAGE SHIFT OF MOS TRANSISTORS BY ION IMPLANTATION.
    Runge, H.
    Electronic Engineering (London), 1976, 48 (575): : 41 - 43
  • [39] DISTRIBUTION PROFILES OF PHOSPHORUS IN SILICON AFTER ION IMPLANTATION.
    Mukashev, B.N.
    Nusupov, K.Kh.
    Kusainov, Zh.A.
    Akhmetov, M.A.
    Smirnov, V.V.
    Soviet physics. Semiconductors, 1982, 16 (01): : 69 - 72
  • [40] MODELING OF DEPLETION LOAD DEVICES MADE BY ION IMPLANTATION.
    Sauvage, J.A.
    Evans, S.A.
    1973, : 61 - 63
12345